A physically unclonable function featuring 0% BER using soft oxide breakdown positions in 40nm CMOS

dc.contributor.author	Chuang, Kent
dc.contributor.author	Bury, Erik
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Kaczer, Ben
dc.contributor.author	Linten, Dimitri
dc.contributor.author	Verbauwhede, Ingrid
dc.contributor.imecauthor	Chuang, Kent
dc.contributor.imecauthor	Bury, Erik
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.imecauthor	Linten, Dimitri
dc.contributor.orcidimec	Bury, Erik::0000-0002-5847-3949
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimec	Linten, Dimitri::0000-0001-8434-1838
dc.date.accessioned	2021-10-25T17:16:32Z
dc.date.available	2021-10-25T17:16:32Z
dc.date.embargo	9999-12-31
dc.date.issued	2018
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/30422
dc.identifier.url	https://ieeexplore.ieee.org/document/8579252
dc.source.beginpage	157
dc.source.conference	Asian Solid State Circuits Conference - A-SSCC
dc.source.conferencedate	5/11/2018
dc.source.conferencelocation	Tainan Taiwan
dc.source.endpage	160
dc.title	A physically unclonable function featuring 0% BER using soft oxide breakdown positions in 40nm CMOS
dc.type	Proceedings paper
dspace.entity.type	Publication
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