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Change Of H-termination on wet cleaned Si9100) and Ge(100) by heat treatment In H2 or Ar

Date

2008
Meeting abstract
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dc.contributor.authorCaymax, Matty
dc.contributor.authorUto, Atsushi
dc.contributor.authorSakuraba, Masao
dc.contributor.authorMurota, Junichi
dc.contributor.imecauthorCaymax, Matty
dc.date.accessioned2021-10-17T06:28:01Z
dc.date.available2021-10-17T06:28:01Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13490
dc.source.beginpage231
dc.source.conference4th International SiGe Technology And Device Meeting
dc.source.conferencedate11/05/2008
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage232
dc.title

Change Of H-termination on wet cleaned Si9100) and Ge(100) by heat treatment In H2 or Ar

dc.typeMeeting abstract
dspace.entity.typePublication
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