Publication:
Analyzing Full Band Transport in 2D TMDs Using the Monte Carlo Method
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0009-0004-7450-820X | |
| cris.virtual.orcid | 0000-0002-4157-1956 | |
| cris.virtual.orcid | 0000-0003-0067-8674 | |
| cris.virtual.orcid | 0000-0001-9179-6443 | |
| cris.virtualsource.department | 8ab0c3cb-f577-4bb6-8620-7aeaca32c736 | |
| cris.virtualsource.department | f9b525b6-66d0-4e40-8dd4-46fc733e347c | |
| cris.virtualsource.department | ce595cb3-c71a-4697-982a-615f6603934d | |
| cris.virtualsource.department | 9423ea63-d2bb-4974-b0c7-6723385dceb6 | |
| cris.virtualsource.orcid | 8ab0c3cb-f577-4bb6-8620-7aeaca32c736 | |
| cris.virtualsource.orcid | f9b525b6-66d0-4e40-8dd4-46fc733e347c | |
| cris.virtualsource.orcid | ce595cb3-c71a-4697-982a-615f6603934d | |
| cris.virtualsource.orcid | 9423ea63-d2bb-4974-b0c7-6723385dceb6 | |
| dc.contributor.author | Vansteenvoort, Nils | |
| dc.contributor.author | Gaddemane, Gautam | |
| dc.contributor.author | Soree, Bart | |
| dc.contributor.author | Van de Put, Maarten | |
| dc.date.accessioned | 2026-09-14T11:19:47Z | |
| dc.date.available | 2026-09-14T11:19:47Z | |
| dc.date.createdwos | 2026 | |
| dc.date.issued | 2025 | |
| dc.description.abstract | Theoretical efforts to study transport properties in 2D are either limited to a simplified analytical description with limited applicability beyond the low-field regime or a numerically intensive full-band approach that is prone to discretization errors. In this paper, we describe a first-principles full-band Monte-Carlo method that utilizes full scattering matrix-elements while retaining the benefits of the analytical approach. We apply this method to the study of field-dependent electron transport in monolayer WS2. To show the limits of applicability, we compare our approach to a simplified effective mass method. For the effective mass method, we extract inter- and intra-valley deformation potentials to match closely the scattering rates of the full-band approach. | |
| dc.identifier.doi | 10.1109/sispad66650.2025.11185915 | |
| dc.identifier.isbn | 979-8-3315-4884-1 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/60342 | |
| dc.language.iso | eng | |
| dc.provenance.editstepuser | greet.vanhoof@imec.be | |
| dc.publisher | IEEE | |
| dc.source.beginpage | 1 | |
| dc.source.conference | International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) | |
| dc.source.conferencedate | 2025-09-24 | |
| dc.source.conferencelocation | Grenoble | |
| dc.source.endpage | 4 | |
| dc.source.journal | 2025 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | |
| dc.source.numberofpages | 4 | |
| dc.title | Analyzing Full Band Transport in 2D TMDs Using the Monte Carlo Method | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| imec.internal.crawledAt | 2025-10-22 | |
| imec.internal.source | crawler | |
| imec.internal.wosCreatedAt | 2026-09-13 | |
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