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Analyzing Full Band Transport in 2D TMDs Using the Monte Carlo Method

 
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cris.virtual.orcid0009-0004-7450-820X
cris.virtual.orcid0000-0002-4157-1956
cris.virtual.orcid0000-0003-0067-8674
cris.virtual.orcid0000-0001-9179-6443
cris.virtualsource.department8ab0c3cb-f577-4bb6-8620-7aeaca32c736
cris.virtualsource.departmentf9b525b6-66d0-4e40-8dd4-46fc733e347c
cris.virtualsource.departmentce595cb3-c71a-4697-982a-615f6603934d
cris.virtualsource.department9423ea63-d2bb-4974-b0c7-6723385dceb6
cris.virtualsource.orcid8ab0c3cb-f577-4bb6-8620-7aeaca32c736
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cris.virtualsource.orcidce595cb3-c71a-4697-982a-615f6603934d
cris.virtualsource.orcid9423ea63-d2bb-4974-b0c7-6723385dceb6
dc.contributor.authorVansteenvoort, Nils
dc.contributor.authorGaddemane, Gautam
dc.contributor.authorSoree, Bart
dc.contributor.authorVan de Put, Maarten
dc.date.accessioned2026-09-14T11:19:47Z
dc.date.available2026-09-14T11:19:47Z
dc.date.createdwos2026
dc.date.issued2025
dc.description.abstractTheoretical efforts to study transport properties in 2D are either limited to a simplified analytical description with limited applicability beyond the low-field regime or a numerically intensive full-band approach that is prone to discretization errors. In this paper, we describe a first-principles full-band Monte-Carlo method that utilizes full scattering matrix-elements while retaining the benefits of the analytical approach. We apply this method to the study of field-dependent electron transport in monolayer WS2. To show the limits of applicability, we compare our approach to a simplified effective mass method. For the effective mass method, we extract inter- and intra-valley deformation potentials to match closely the scattering rates of the full-band approach.
dc.identifier.doi10.1109/sispad66650.2025.11185915
dc.identifier.isbn979-8-3315-4884-1
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/60342
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.beginpage1
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
dc.source.conferencedate2025-09-24
dc.source.conferencelocationGrenoble
dc.source.endpage4
dc.source.journal2025 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD
dc.source.numberofpages4
dc.title

Analyzing Full Band Transport in 2D TMDs Using the Monte Carlo Method

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-09-13
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