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Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs

Date

2004
Journal article
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dc.contributor.authorRafi, Joan Marc
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-15T15:43:06Z
dc.date.available2021-10-15T15:43:06Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9487
dc.source.beginpage1211
dc.source.endpage1221
dc.source.journalSolid-State Electronics
dc.source.volume48
dc.title

Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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