Publication:

Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate

Date

2018
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorBorga, Matteo
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorZhao, Ming
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.date.accessioned2021-10-25T16:52:27Z
dc.date.available2021-10-25T16:52:27Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30302
dc.source.beginpage38
dc.source.conferenceGaN Marathon 2.0
dc.source.conferencedate18/04/2018
dc.source.conferencelocationPadova Italy
dc.source.endpage39
dc.title

Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions