Publication:

Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects

Date

2018
Proceedings Paper
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dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBarbato, A.
dc.contributor.authorBorga, Matteo
dc.contributor.authorDe Santi, Carlos
dc.contributor.authorBarbato, M.
dc.contributor.authorStoffels, Steve
dc.contributor.authorZhao, Ming
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorHaeberlen, Oliver
dc.contributor.authorDetzel, Thomas
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-25T23:22:16Z
dc.date.available2021-10-25T23:22:16Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31332
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614605
dc.source.beginpage703
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage706
dc.title

Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects

dc.typeProceedings paper
dspace.entity.typePublication
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