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Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of Ge
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1966 since deposited on 2021-10-18
1last month
Acq. date: 2025-12-08
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Metrics
Views
1966 since deposited on 2021-10-18
1last month
Acq. date: 2025-12-08
Citations