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Impact of the Ge content on the bandgap-narrowing induced leakage current of recessed Si1-xGex source/drain junctions
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Impact of the Ge content on the bandgap-narrowing induced leakage current of recessed Si1-xGex source/drain junctions
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Date
2009
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bargallo Gonzalez, Mireia
;
Simoen, Eddy
;
Verheyen, Peter
;
Loo, Roger
;
Claeys, Cor
Journal
IEEE Transactions on Electron Devices
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1784
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Acq. date: 2025-12-15
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Metrics
Views
1784
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-15
Citations