Modeling the impact of junction angles in tunnel field-effect transistors

dc.contributor.author	Kao, Frank
dc.contributor.author	Verhulst, Anne
dc.contributor.author	Vandenberghe, William
dc.contributor.author	Soree, Bart
dc.contributor.author	Groeseneken, Guido
dc.contributor.author	De Meyer, Kristin
dc.contributor.imecauthor	Kao, Frank
dc.contributor.imecauthor	Verhulst, Anne
dc.contributor.imecauthor	Soree, Bart
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.orcidimec	Verhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimec	Soree, Bart::0000-0002-4157-1956
dc.date.accessioned	2021-10-20T12:05:11Z
dc.date.available	2021-10-20T12:05:11Z
dc.date.issued	2012
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20902
dc.source.beginpage	31
dc.source.endpage	37
dc.source.issue	1
dc.source.journal	Solid-State Electronics
dc.source.volume	69
dc.title	Modeling the impact of junction angles in tunnel field-effect transistors
dc.type	Journal article
dspace.entity.type	Publication
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