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Surface-potential-based compact model for the gate current of p-GaN gate HEMTs

Date

2020
Journal article
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dc.contributor.authorWang, Jie
dc.contributor.authorChen, Zhanfei
dc.contributor.authorYou, Shuzhen
dc.contributor.authorZhou, Wenyong
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorLiu, Jun
dc.contributor.authorSun, Lingling
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-29T07:47:42Z
dc.date.available2021-10-29T07:47:42Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36301
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9159856
dc.source.issue0
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume67
dc.title

Surface-potential-based compact model for the gate current of p-GaN gate HEMTs

dc.typeJournal article
dspace.entity.typePublication
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