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Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization
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Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization
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Date
2001
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Serrano, J. J.
;
De Witte, Hilde
;
Vandervorst, Wilfried
;
Guzman, B.
;
Blanco, J. M.
Journal
Journal of Applied Physics
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1810
since deposited on 2021-10-14
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Acq. date: 2025-12-17
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Metrics
Views
1810
since deposited on 2021-10-14
2
last month
1
last week
Acq. date: 2025-12-17
Citations