Publication:

Magnetic immunity of STT-MRAM: external magnetic field orientation impact on writing reliability

Date

2024
Proceedings Paper
https://doi.org/10.1109/iedm50854.2024.10873572
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dc.contributor.authorVander Meeren, N.
dc.contributor.authorVan Beek, Simon
dc.contributor.authorGama Monteiro Junior, Maxwel
dc.contributor.authorGarcia Redondo, Fernando
dc.contributor.authorChatterjee, Jyotirmoy
dc.contributor.authorKumar, Ankit
dc.contributor.authorWostyn, Kurt
dc.contributor.authorCouet, Sebastien
dc.contributor.authorVerbauwhede, I.
dc.date.accessioned2026-04-22T07:09:26Z
dc.date.available2026-04-22T07:09:26Z
dc.date.createdwos2026-03-18
dc.date.issued2024
dc.description.abstractWe experimentally investigate the writing reliability of STT-MRAM in the presence of magnetic fields oriented at different angles. It is established that external magnetic fields oriented non-parallel to the easy axis of the device significantly increase the write error rate for short pulse widths. These cases have been ignored in magnetic immunity testing thus far. More precisely, at 40mT, the write error rate is shown to deteriorate by over a factor of 103 depending on the angle of the external field. Moreover, these results are corroborated by stochastic LLGS simulations.
dc.description.wosFundingTextThis work was supported by IMEC's industrial affiliation program on IMEC's devices. We also acknowledge the support from the ECSEL Joint Undertaking Program (grant No. 876925-project ANDANTE). We would like to acknowledge help from Philippe Roussel in the development of algorithms used for the WER data analysis.
dc.identifier.doi10.1109/iedm50854.2024.10873572
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59148
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedate2024-12-07
dc.source.conferencelocationSan Francisco
dc.source.journal2024 IEEE International Electron Devices Meeting, IEDM
dc.source.numberofpages4
dc.title

Magnetic immunity of STT-MRAM: external magnetic field orientation impact on writing reliability

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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