Publication:

Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices

Date

2021
Journal article
https://doi.org/10.1016/j.mejo.2021.105277
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dc.contributor.authorCoelho, Carlos H. S.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorBellodi, Marcello
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorAgopian, Paula G. D.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.orcidextCoelho, Carlos H. S.::0000-0003-0412-4476
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2022-03-07T10:40:00Z
dc.date.available2022-03-07T10:40:00Z
dc.date.issued2021
dc.identifier.doi10.1016/j.mejo.2021.105277
dc.identifier.issn0026-2692
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39334
dc.publisherELSEVIER SCI LTD
dc.source.beginpage105277
dc.source.issuena
dc.source.journalMICROELECTRONICS JOURNAL
dc.source.numberofpages6
dc.source.volume117
dc.subject.keywordsDEGRADATION
dc.subject.keywordsPOINT
dc.subject.keywordsMOBILITY
dc.title

Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices

dc.typeJournal article
dspace.entity.typePublication
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