Publication:

Metal-organic chemical vapour deposition for 2D chalcogenides

Date

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5781-7594
cris.virtualsource.department5a858383-b569-42cd-8788-c2e90735c7e5
cris.virtualsource.orcid5a858383-b569-42cd-8788-c2e90735c7e5
dc.contributor.authorZhang, Xiaotian
dc.contributor.authorTrainor, Nicholas
dc.contributor.authorMc Knight, Thomas V.
dc.contributor.authorGraves, Andrew R.
dc.contributor.authorWu, Zhenhua
dc.contributor.authorXu, Lei
dc.contributor.authorZheng, Xudong
dc.contributor.authorZhang, Tianyi
dc.contributor.authorZhu, Jiadi
dc.contributor.authorPalacios, Tomas
dc.contributor.authorKong, Jing
dc.contributor.authorGroven, Benjamin
dc.contributor.authorTian, Bobo
dc.contributor.authorDuan, Chungang
dc.contributor.authorChu, Junhao
dc.contributor.authorRedwing, Joan M.
dc.date.accessioned2026-01-27T08:17:43Z
dc.date.available2026-01-27T08:17:43Z
dc.date.createdwos2025-09-22
dc.date.issued2025
dc.description.abstractMetal–organic chemical vapour deposition (MOCVD), a cornerstone of III–V semiconductor manufacturing, is emerging as a pivotal technique for the scalable synthesis of two-dimensional (2D) materials, particularly transition metal dichalcogenides (TMDs). This Primer traces the evolution of MOCVD, from its origins in epitaxial growth of conventional semiconductors to its modern role in producing wafer-scale, high-quality 2D layers and heterostructures. We provide a comprehensive overview of the technique, detailing its experimental apparatus, in situ characterization tools and process conditions with a focus on current applications including epitaxy of TMD monolayers, high- and low-temperature growth of TMDs and synthesis of other 2D metal chalcogenides. This Primer also highlights applications enabled by TMD MOCVD in 3D complementary metal–oxide–semiconductor integration, photonic and optoelectronics devices, and direct integration of 2D films onto flexible polymers for wearable electronics, underscoring the compatibility of MOCVD with industrial processes. By discussing the current limitations and further directions of 2D MOCVD, this Primer positions MOCVD as a key transformative tool for next-generation electronics, photonics and flexible technologies.
dc.description.wosFundingTextX. Zhang, Z.W. and L.X. acknowledge support from the National Natural Science Foundation of China (no. 52202179 and no. 62201345). N.T., A.R.G. and J.M.R. acknowledge support from the National Science Foundation through the 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP) under cooperative agreement DMR-2039351. T.V.M. and J.M.R. acknowledge support from the US Air Force Office of Scientific Research and Clarkson Aerospace Corp. under award no. FA9550-21-1-0460. B.T., C.D. and J.C. acknowledge the National Key Research and Development Program of China (no. 2024YFA1410700) and the National Natural Science Foundation of China (no. T2222025 and no. 62174053). X. Zheng and J.K. acknowledge support from the Semiconductor Research Corporation Center 7 in JUMP 2.0 (award no. 145105-21913). T.Z. and J.K. acknowledge the support by US Department of Energy (DOE), Office of Science, Basic Energy Sciences under award no. DE-SC0020042.
dc.identifier.doi10.1038/s43586-025-00429-4
dc.identifier.issn2662-8449
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/58743
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherSPRINGERNATURE
dc.source.beginpage57
dc.source.issue1
dc.source.journalNATURE REVIEWS METHODS PRIMERS
dc.source.numberofpages20
dc.source.volume5
dc.subject.keywordsSINGLE-SOURCE PRECURSORS
dc.subject.keywordsLARGE-AREA
dc.subject.keywordsGALLIUM SULFIDE
dc.subject.keywordsTRANSPORT-PROPERTIES
dc.subject.keywordsGRAIN-BOUNDARIES
dc.subject.keywordsMOCVD GROWTH
dc.subject.keywordsPHASE
dc.subject.keywordsMOS2
dc.subject.keywordsMONOLAYERS
dc.subject.keywordsPRESSURES
dc.title

Metal-organic chemical vapour deposition for 2D chalcogenides

dc.typeJournal article review
dspace.entity.typePublication
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
Files
Publication available in collections: