Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies

dc.contributor.author	Claes, Dieter
dc.contributor.author	Franco, Jacopo
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Linten, Dimitri
dc.contributor.author	Heyns, Marc
dc.contributor.imecauthor	Claes, Dieter
dc.contributor.imecauthor	Franco, Jacopo
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	Linten, Dimitri
dc.contributor.imecauthor	Heyns, Marc
dc.contributor.orcidimec	Franco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimec	Linten, Dimitri::0000-0001-8434-1838
dc.date.accessioned	2021-10-28T20:45:32Z
dc.date.available	2021-10-28T20:45:32Z
dc.date.issued	2020
dc.identifier.issn	0021-8979
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/34910
dc.identifier.url	https://doi.org/10.1063/5.0006110
dc.source.beginpage	104101
dc.source.issue	10
dc.source.journal	Journal of Applied Physics
dc.source.volume	128
dc.title	Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies
dc.type	Journal article
dspace.entity.type	Publication
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