Publication:

Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors

Date

2018
Journal article
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dc.contributor.authorVerreck, Devin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorXiang, Yang
dc.contributor.authorYakimets, Dmitry
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorParvais, Bertrand
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorXiang, Yang
dc.contributor.imecauthorYakimets, Dmitry
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecXiang, Yang::0000-0003-0091-6935
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-26T08:36:14Z
dc.date.available2021-10-26T08:36:14Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32200
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8357842/
dc.source.beginpage658
dc.source.endpage663
dc.source.journalIEEE Journal of the Electron Devices Society
dc.source.volume6
dc.title

Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
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