Publication:

Influence of InGaP and AlGaAs Schottky layers on ESD robustness in GaAs pHEMTs

Date

2012
Journal article
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dc.contributor.authorChen, Shih-Hung
dc.contributor.authorLin, Yueh-Chin
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorHellings, Geert
dc.contributor.authorChang, Edward Yi
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.date.accessioned2021-10-20T10:14:35Z
dc.date.available2021-10-20T10:14:35Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20440
dc.source.beginpage1252
dc.source.endpage1254
dc.source.issue9
dc.source.journalIEEE Electron Device Letters
dc.source.volume33
dc.title

Influence of InGaP and AlGaAs Schottky layers on ESD robustness in GaAs pHEMTs

dc.typeJournal article
dspace.entity.typePublication
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