Publication:

A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving <-44-dBc HD3 Up To 1.5-V p-p Output Swing Over 0.01-5.4-GHz for Direct RF Sampling Applications

Date

2022
Journal article
https://doi.org/10.1109/JSSC.2021.3103204
Simple item page Full metadata Statistics
 
dc.contributor.authorvan de Zee, Ronan A. R.
dc.contributor.authorNauta, Bram
dc.contributor.authorBhat, Anoop
dc.contributor.imecauthorBhat, Anoop
dc.date.accessioned2022-05-05T08:23:30Z
dc.date.available2021-12-26T02:06:09Z
dc.date.available2022-05-05T08:23:30Z
dc.date.embargo2023-07-18
dc.date.issued2022
dc.description.wosFundingTextThis work was supported by the Semiconductor Research Corporation (SRC) through Texas Analog Center of Excellence (TxACE) under Grant 2810.026.
dc.identifier.doi10.1109/JSSC.2021.3103204
dc.identifier.issn0018-9200
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38668
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage1432
dc.source.endpage1445
dc.source.issue5
dc.source.journalIEEE JOURNAL OF SOLID-STATE CIRCUITS
dc.source.numberofpages14
dc.source.volume57
dc.subject.keywordsDISTORTION
dc.subject.keywordsLNA
dc.subject.keywordsLINEARITY
dc.subject.keywordsAMPLIFIER
dc.subject.keywordsDESIGN
dc.subject.keywordsADC
dc.title

A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving <-44-dBc HD3 Up To 1.5-V p-p Output Swing Over 0.01-5.4-GHz for Direct RF Sampling Applications

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
A_22-nm_FDSOI_CMOS_Low-Noise_Active_Balun_Achieving__-44-dBc_HD3_Up_To_1.5-V_p-p_Output_Swing_Over_0.01-5.4-GHz_for_Direct_RF_Sampling_Applications
Size:
4.51 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
Publication available in collections:
Articles