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CD metrology for EUV lithography and etch

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dc.contributor.authorJohanesen, H.
dc.contributor.authorKenslea, A.
dc.contributor.authorWilliamson, M.
dc.contributor.authorKnowles, M.
dc.contributor.authorKwakman, L.
dc.contributor.authorLevi, S.
dc.contributor.authorNishry, N.
dc.contributor.authorAdan, O.
dc.contributor.authorEnglard, I.
dc.contributor.authorVan Puymbroeck, Jan
dc.contributor.authorFelder, Dan
dc.contributor.authorGov, S.
dc.contributor.authorCohen, O.
dc.contributor.authorTurovets, I.
dc.contributor.imecauthorVan Puymbroeck, Jan
dc.date.accessioned2021-10-22T19:57:00Z
dc.date.available2021-10-22T19:57:00Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25436
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7164505
dc.source.beginpage329
dc.source.conference26th Annual SEMI Advanced Semiconductor Manufacturing Conference - ASMC
dc.source.conferencedate3/05/2015
dc.source.conferencelocationSaratoga Springs, NY USA
dc.source.endpage335
dc.title

CD metrology for EUV lithography and etch

dc.typeProceedings paper
dspace.entity.typePublication
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