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Epitaxial growth of Si and SiGe by reduced pressure CVD for device applications

Date

 
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-14T11:29:44Z
dc.date.available2021-10-14T11:29:44Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3633
dc.source.conferenceWorkshop in the Framework of the Leuven-Budapest Bilateral Physics Collaboration; 22-23 April 1999;
dc.source.conferencelocation
dc.title

Epitaxial growth of Si and SiGe by reduced pressure CVD for device applications

dc.typeOral presentation
dspace.entity.typePublication
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