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Probing the indium mole fraction in an InGaN epilayer by depth resolved catholuminescence

Date

1998
Proceedings Paper
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dc.contributor.authorTrager-Cowan, C.
dc.contributor.authorMiddleton, P. G.
dc.contributor.authorMohammed, A.
dc.contributor.authorO'Donnell, K. P. O.
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.accessioned2021-10-01T09:06:21Z
dc.date.available2021-10-01T09:06:21Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2997
dc.source.beginpage715
dc.source.conferenceNitride Semiconductors
dc.source.conferencedate1/12/1997
dc.source.conferencelocationBoston, MA USA
dc.source.endpage718
dc.title

Probing the indium mole fraction in an InGaN epilayer by depth resolved catholuminescence

dc.typeProceedings paper
dspace.entity.typePublication
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