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Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Date

2013
Journal article
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dc.contributor.authorProcel, Luis Miguel
dc.contributor.authorTrojman, Lionel
dc.contributor.authorMoreno, J.
dc.contributor.authorCrupi, Felice
dc.contributor.authorMaccaronio, V.
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-21T11:07:14Z
dc.date.available2021-10-21T11:07:14Z
dc.date.issued2013
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22958
dc.source.beginpage74509
dc.source.issue7
dc.source.journalJournal of Applied Physics
dc.source.volume114
dc.title

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

dc.typeJournal article
dspace.entity.typePublication
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