Publication:

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

Date

2008
Proceedings Paper
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dc.contributor.authorGriffoni, Alessio
dc.contributor.authorSilvestri, Marco
dc.contributor.authorGerardin, Simone
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorKaczer, Ben
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorNackaerts, Axel
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-17T07:25:41Z
dc.date.available2021-10-17T07:25:41Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13813
dc.source.beginpage432
dc.source.conference8th European Workshop on Radiation Effects on Components and Systems - RADECS
dc.source.conferencedate10/09/2008
dc.source.conferencelocationJyväskylä Finland
dc.source.endpage437
dc.title

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

dc.typeProceedings paper
dspace.entity.typePublication
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