Publication:

Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

Date

2021
Journal article
https://doi.org/10.1016/j.sse.2021.108050
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dc.contributor.authorAndrade, Maria Gloria Cano de
dc.contributor.authorBergamim, Luis Felipe de Oliveira
dc.contributor.authorBaptista Junior, Braz
dc.contributor.authorNogueira, Carlos Roberto
dc.contributor.authorda Silva, Fabio Alex
dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorParvais, Bertrand
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2022-02-24T09:26:52Z
dc.date.available2022-02-24T09:26:52Z
dc.date.issued2021
dc.identifier.doi10.1016/j.sse.2021.108050
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39091
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage108050
dc.source.issuena
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages5
dc.source.volume183
dc.subject.keywords1/F NOISE
dc.subject.keywordsHEMTS
dc.subject.keywordsSCATTERING
dc.title

Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

dc.typeJournal article
dspace.entity.typePublication
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