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Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

 
dc.contributor.authorTahiat, A.
dc.contributor.authorCretu, B.
dc.contributor.authorVeloso, Anabela
dc.contributor.authorSimoen, E.
dc.contributor.imecauthorVeloso, Anabela
dc.date.accessioned2024-04-11T08:32:37Z
dc.date.available2024-02-05T17:09:52Z
dc.date.available2024-04-11T08:32:37Z
dc.date.issued2023
dc.identifier.doi10.1016/j.sse.2023.108711
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43495
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 108711
dc.source.endpageN/A
dc.source.issueNovember
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages5
dc.source.volume209
dc.subject.keywordsNOISE
dc.title

Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

dc.typeJournal article
dspace.entity.typePublication
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