Publication:
Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?
| dc.contributor.author | Tahiat, A. | |
| dc.contributor.author | Cretu, B. | |
| dc.contributor.author | Veloso, Anabela | |
| dc.contributor.author | Simoen, E. | |
| dc.contributor.imecauthor | Veloso, Anabela | |
| dc.date.accessioned | 2024-04-11T08:32:37Z | |
| dc.date.available | 2024-02-05T17:09:52Z | |
| dc.date.available | 2024-04-11T08:32:37Z | |
| dc.date.issued | 2023 | |
| dc.identifier.doi | 10.1016/j.sse.2023.108711 | |
| dc.identifier.issn | 0038-1101 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/43495 | |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | |
| dc.source.beginpage | Art. 108711 | |
| dc.source.endpage | N/A | |
| dc.source.issue | November | |
| dc.source.journal | SOLID-STATE ELECTRONICS | |
| dc.source.numberofpages | 5 | |
| dc.source.volume | 209 | |
| dc.subject.keywords | NOISE | |
| dc.title | Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided? | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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