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Quantitative TOFSIMS depth profiling of ultra thin silicon oxynitride films

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dc.contributor.authorConard, Thierry
dc.contributor.authorDe Witte, Hilde
dc.contributor.authorSchaekers, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-14T12:45:32Z
dc.date.available2021-10-14T12:45:32Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4216
dc.source.beginpage381
dc.source.conferenceSecondary Ion Mass Spectrometry - SIMS XII. Proceedings of the 12th International Conference
dc.source.conferencedate5/09/1999
dc.source.conferencelocationBrussel Belgium
dc.source.endpage384
dc.title

Quantitative TOFSIMS depth profiling of ultra thin silicon oxynitride films

dc.typeProceedings paper
dspace.entity.typePublication
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