Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications

dc.contributor.author	Date, Lucien
dc.contributor.author	Rittersma, Chris
dc.contributor.author	Massoubre, D.
dc.contributor.author	Ponomarev, Youri
dc.contributor.author	Roozeboom, F.
dc.contributor.author	Pique, Didier
dc.contributor.author	Van Autryve, Luc
dc.contributor.author	Van Elshocht, Sven
dc.contributor.author	Caymax, Matty
dc.contributor.imecauthor	Date, Lucien
dc.contributor.imecauthor	Van Autryve, Luc
dc.contributor.imecauthor	Van Elshocht, Sven
dc.contributor.imecauthor	Caymax, Matty
dc.contributor.orcidimec	Van Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned	2021-10-15T04:16:00Z
dc.date.available	2021-10-15T04:16:00Z
dc.date.issued	2003
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/7385
dc.source.beginpage	133
dc.source.conference	14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference - ASMC
dc.source.conferencedate	31/03/2003
dc.source.conferencelocation	München Germany
dc.source.endpage	136
dc.title	Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
dc.type	Proceedings paper
dspace.entity.type	Publication
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