Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation

dc.contributor.author	Vohra, Anurag
dc.contributor.author	Pourtois, Geoffrey
dc.contributor.author	Loo, Roger
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.imecauthor	Vohra, Anurag
dc.contributor.imecauthor	Pourtois, Geoffrey
dc.contributor.imecauthor	Loo, Roger
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.orcidimec	Vohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimec	Pourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.date.accessioned	2022-02-22T14:37:23Z
dc.date.available	2022-02-22T14:37:23Z
dc.date.issued	2021
dc.identifier.doi	10.1063/5.0064952
dc.identifier.issn	0021-8979
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/39026
dc.publisher	AIP Publishing
dc.source.issue	12
dc.source.journal	JOURNAL OF APPLIED PHYSICS
dc.source.numberofpages	14
dc.source.volume	130
dc.subject.keywords	CHEMICAL-VAPOR-DEPOSITION
dc.subject.keywords	DIFFUSION
dc.subject.keywords	GE
dc.subject.keywords	VACANCY
dc.subject.keywords	EXCHANGE
dc.subject.keywords	SILICON
dc.subject.keywords	SI
dc.title	Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation
dc.type	Journal article
dspace.entity.type	Publication
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