Molecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications

dc.contributor.author	Behet, Markus
dc.contributor.author	Nemeth, Stefan
dc.contributor.author	De Boeck, Jo
dc.contributor.author	Borghs, Gustaaf
dc.contributor.author	Tümmler, J.
dc.contributor.author	Woitok, J.
dc.contributor.author	Geurts, J.
dc.contributor.imecauthor	Nemeth, Stefan
dc.contributor.imecauthor	De Boeck, Jo
dc.contributor.imecauthor	Borghs, Gustaaf
dc.date.accessioned	2021-09-30T11:27:22Z
dc.date.available	2021-09-30T11:27:22Z
dc.date.embargo	9999-12-31
dc.date.issued	1998
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/2386
dc.source.beginpage	428
dc.source.endpage	432
dc.source.issue	4
dc.source.journal	Semiconductor Science and Technology
dc.source.volume	13
dc.title	Molecular beam epitaxy and characterization of InAs/Al0.2Ga0.8Sb heterostructures for magnetic sensing applications
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 2430.pdf Size: 149.27 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles

Date