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Low temperature operation of 0.13 μm partially-depleted SOI nMOSFETs with floating body

Date

2002
Proceedings Paper
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dc.contributor.authorPavanello, M. A.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T22:43:51Z
dc.date.available2021-10-14T22:43:51Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6702
dc.source.beginpage31
dc.source.conferenceWOLTE 5 - Proceedings of the 5th European Workshop on Low Temperature Electronics
dc.source.conferencedate19/06/2002
dc.source.conferencelocationGrenoble France
dc.source.endpage34
dc.title

Low temperature operation of 0.13 μm partially-depleted SOI nMOSFETs with floating body

dc.typeProceedings paper
dspace.entity.typePublication
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