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Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
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Si trench around drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
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Date
2011
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Srivastava, Puneet
;
Oprins, Herman
;
Van Hove, Marleen
;
Das, Jo
;
Malinowski, Pawel
;
Bakeroot, Benoit
;
Marcon, Denis
;
Visalli, Domenica
;
Kang, Xuanwu
;
Lenci, Silvia
;
Geens, Karen
;
Viaene, John
;
Cheng, Kai
;
Leys, Maarten
;
De Wolf, Ingrid
;
Decoutere, Stefaan
;
Mertens, Robert
;
Borghs, Gustaaf
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1866
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Acq. date: 2025-12-15
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Views
1866
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-15
Citations