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Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities
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Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities
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Date
1994
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Caymax, Matty
;
Poortmans, Jef
;
Van Ammel, Annemie
;
Libezny, Milan
;
Nijs, Johan
;
Mertens, Robert
Journal
Thin Solid Films
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33296
since deposited on 2021-09-29
3
last month
Acq. date: 2025-12-15
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Metrics
Views
33296
since deposited on 2021-09-29
3
last month
Acq. date: 2025-12-15
Citations