Publication:

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation

Date

 
dc.contributor.authorVandemaele, Michiel
dc.contributor.authorChuang, Kai-Hsin
dc.contributor.authorBury, Erik
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorKaczer, Ben
dc.contributor.imecauthorVandemaele, Michiel
dc.contributor.imecauthorChuang, Kai-Hsin
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecVandemaele, Michiel::0000-0003-0740-4115
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2022-01-27T11:03:13Z
dc.date.available2021-11-02T16:05:24Z
dc.date.available2022-01-27T11:03:13Z
dc.date.issued2020
dc.identifier.eisbn978-1-7281-3199-3
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38215
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateAPR 28-MAY 30, 2020
dc.source.conferencelocationVirtual
dc.source.journalna
dc.source.numberofpages7
dc.subject.keywordsPASSIVATION
dc.subject.keywordsRECOVERY
dc.subject.keywordsKINETICS
dc.subject.keywordsCENTERS
dc.subject.keywordsSI/SIO2
dc.subject.keywordsH-2
dc.title

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections: