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Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

 
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dc.contributor.authorVishwakarma, Kavita
dc.contributor.authorLee, K.
dc.contributor.authorKruv, Anastasiia
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorvan Setten, Michiel
dc.contributor.authorPashartis, Christopher
dc.contributor.authorOkudur, Oguzhan Orkut
dc.contributor.authorGonzalez, Mario
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorKaczer, Ben
dc.date.accessioned2026-04-30T13:34:48Z
dc.date.available2026-04-30T13:34:48Z
dc.date.createdwos2025-10-19
dc.date.issued2025
dc.description.abstractThis study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demonstrated that MS induces a positive vth shift in the device transfer characteristics and enhances electron trapping during Positive Bias Temperature Instability (PBTI) tests. These effects are attributed to the widening of the IGZO bandgap (EG) and increased accessibility of carriers to AlOx gate oxide trap levels. As substantial residual MS is generated in 3D device processing, understanding its impact on IGZO TFTs is crucial for enabling future 3D DRAM technology.
dc.description.wosFundingTextK. Vishwakarma acknowledges the funding from the European Union (EU)'s Horizon Europe Framework Programme under the Marie Sklowdowska-Curie (MSCA) Postdoctoral Fellowship Action 2023 - MINDSET with grant agreement No. 101154357 from the European Commission. This work was supported by the industry affiliated Active Memory Program and This work has been enabled in part by the NanoIC pilot line. The acquisition and operation are jointly funded by the Chips Joint Undertaking, through the European Union's Digital Europe (101183266) and Horizon Europe programs (101183277), as well as by the participating states Belgium (Flanders), France, Germany, Finland, Ireland and Romania
dc.identifier.doi10.1109/irps48204.2025.10983050
dc.identifier.isbn979-8-3315-0478-6
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59251
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate2025-03-30
dc.source.conferencelocationMonterey
dc.source.journal2025 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
dc.source.numberofpages6
dc.title

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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