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Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness

Date

1998
Journal article
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dc.contributor.authorKol'dyaev, Victor
dc.contributor.authorClerix, Andre
dc.contributor.authorDeferm, Ludo
dc.contributor.authorVan Overstraeten, Roger
dc.contributor.imecauthorClerix, Andre
dc.contributor.imecauthorDeferm, Ludo
dc.date.accessioned2021-09-30T12:21:13Z
dc.date.available2021-09-30T12:21:13Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2670
dc.source.beginpage2131
dc.source.endpage2138
dc.source.issue4
dc.source.journalJournal of Applied Physics
dc.source.volume83
dc.title

Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness

dc.typeJournal article
dspace.entity.typePublication
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