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Low dark current, mismatched In0.82Ga0.18As/InAsyP1-y photodetectors for 2.5μm wavelength, grown on InP by MOVPE

Date

1997
Proceedings Paper
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dc.contributor.authorD'Hondt, Mark
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorVan Daele, Peter
dc.contributor.authorDemeester, Piet
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.contributor.orcidimecDemeester, Piet::0000-0003-2810-3899
dc.date.accessioned2021-09-30T08:13:28Z
dc.date.available2021-09-30T08:13:28Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1863
dc.source.beginpageH5
dc.source.conferenceEW MOVPE VII. 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques
dc.source.conferencedate8/06/1997
dc.source.conferencelocationBerlin Germany
dc.title

Low dark current, mismatched In0.82Ga0.18As/InAsyP1-y photodetectors for 2.5μm wavelength, grown on InP by MOVPE

dc.typeProceedings paper
dspace.entity.typePublication
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