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Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling

Date

2007
Journal article
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dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorKaczer, Ben
dc.contributor.authorLeys, Frederik
dc.contributor.authorMeuris, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-16T18:48:32Z
dc.date.available2021-10-16T18:48:32Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12738
dc.identifier.urlhttp://scitation.aip.org/vsearch/servlet/VerityServlet?KEY=APPLAB&ONLINE=YES&smode=strresults&sort=chron&maxdisp=25&threshold=0&
dc.source.beginpage23506
dc.source.issue2
dc.source.journalApplied Physics Letters
dc.source.volume91
dc.title

Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling

dc.typeJournal article
dspace.entity.typePublication
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