Publication:
Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Date
| dc.contributor.author | Rosseel, Erik | |
| dc.contributor.author | Porret, Clément | |
| dc.contributor.author | Hikavyy, Andriy | |
| dc.contributor.author | Loo, Roger | |
| dc.contributor.author | Tirrito, Matteo | |
| dc.contributor.author | Douhard, Bastien | |
| dc.contributor.author | Richard, Olivier | |
| dc.contributor.author | Horiguchi, Naoto | |
| dc.contributor.author | Khazaka, Rami | |
| dc.contributor.imecauthor | Rosseel, Erik | |
| dc.contributor.imecauthor | Porret, Clément | |
| dc.contributor.imecauthor | Hikavyy, Andriy | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.imecauthor | Douhard, Bastien | |
| dc.contributor.imecauthor | Richard, Olivier | |
| dc.contributor.imecauthor | Horiguchi, Naoto | |
| dc.contributor.imecauthor | Khazaka, Rami | |
| dc.contributor.orcidimec | Porret, Clément::0000-0002-4561-348X | |
| dc.contributor.orcidimec | Hikavyy, Andriy::0000-0002-8201-075X | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.contributor.orcidimec | Richard, Olivier::0000-0002-3994-8021 | |
| dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
| dc.date.accessioned | 2021-10-29T03:16:14Z | |
| dc.date.available | 2021-10-29T03:16:14Z | |
| dc.date.issued | 2020-07 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/35856 | |
| dc.identifier.url | https://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/142692 | |
| dc.source.beginpage | G03-1733 | |
| dc.source.conference | ECS Prime Meeting, SiGe symposium | |
| dc.source.conferencedate | 4/10/2020 | |
| dc.source.conferencelocation | Honululu USA | |
| dc.title | Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy | |
| dc.type | Meeting abstract | |
| dspace.entity.type | Publication | |
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