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Failure rate prediction and accelerated detection of anomalous charge loss in flash memories by using an analytical transient physics-based charge loss model

Date

2002
Journal article
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dc.contributor.authorSchuler, Franz
dc.contributor.authorTempel, Georg
dc.contributor.authorMelzner, H.
dc.contributor.authorJacob, M.
dc.contributor.authorHendrickx, Paul
dc.contributor.authorWellekens, Dirk
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-14T23:07:19Z
dc.date.available2021-10-14T23:07:19Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6813
dc.source.beginpage2650
dc.source.endpage2653
dc.source.issue4B
dc.source.journalJapanese Journal of Applied Physics. Part 1
dc.source.volume41
dc.title

Failure rate prediction and accelerated detection of anomalous charge loss in flash memories by using an analytical transient physics-based charge loss model

dc.typeJournal article
dspace.entity.typePublication
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