Edge-enhanced Raman scattering in narrow sGe fin field-effect transistor channels

dc.contributor.author	Nuytten, Thomas
dc.contributor.author	Hantschel, Thomas
dc.contributor.author	Kosemura, Daisuke
dc.contributor.author	Schulze, Andreas
dc.contributor.author	De Wolf, Ingrid
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.imecauthor	Nuytten, Thomas
dc.contributor.imecauthor	Hantschel, Thomas
dc.contributor.imecauthor	De Wolf, Ingrid
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.orcidimec	Nuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimec	Hantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimec	De Wolf, Ingrid::0000-0003-3822-5953
dc.date.accessioned	2021-10-22T21:25:12Z
dc.date.available	2021-10-22T21:25:12Z
dc.date.issued	2015
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/25697
dc.identifier.url	http://scitation.aip.org/content/aip/journal/apl/106/3/10.1063/1.4906537
dc.source.beginpage	33107
dc.source.issue	3
dc.source.journal	Applied Physics Letters
dc.source.volume	106
dc.title	Edge-enhanced Raman scattering in narrow sGe fin field-effect transistor channels
dc.type	Journal article
dspace.entity.type	Publication
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