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Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates

Date

2010-12
Journal article
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dc.contributor.authorWang, Gang
dc.contributor.authorRosseel, Erik
dc.contributor.authorLoo, Roger
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.date.accessioned2021-10-19T00:18:04Z
dc.date.available2021-10-19T00:18:04Z
dc.date.embargo9999-12-31
dc.date.issued2010-12
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18334
dc.identifier.urlhttp://link.aip.org/link/?JAP/108/123517
dc.source.beginpage123517
dc.source.issue12
dc.source.journalJournal of Applied Physics
dc.source.volume108
dc.title

Ge instability and the growth of Ge epitaxial layers in nanochannels on patterned Si (001) substrates

dc.typeJournal article
dspace.entity.typePublication
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