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5 x 20 Gb/s III-V on silicon electroabsorption modulator array heteregoneously, integrared with a 1.6nm channel-spacing silicon AWG
Publication:
5 x 20 Gb/s III-V on silicon electroabsorption modulator array heteregoneously, integrared with a 1.6nm channel-spacing silicon AWG
Date
2015
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Fu, Xin
;
Huang, Qiangsheng
;
Hu, Yingtao
;
Tassaert, Martijn
;
Verbist, Jochem
;
Cheng, Jianxin
;
Ma, Keqi
;
Zhang, Jianhao
;
Chen, Kaixuan
;
Zhang, Chenzhao
;
Shi, Yaocheng
;
Bauwelinck, Johan
;
Roelkens, Gunther
;
Liu, Liu
;
He, Sailing
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1969
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
Metrics
Views
1969
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations