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Statistical investigation of the impact of program history and oxide-metal interface on OxRRAM retention

Date

2016
Proceedings Paper
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dc.contributor.authorChen, Michael
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-23T10:15:31Z
dc.date.available2021-10-23T10:15:31Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26426
dc.source.beginpage99
dc.source.conferenceIEEE International Electron Devices Meeting - IEEE IEDM
dc.source.conferencedate5/12/2016
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage102
dc.title

Statistical investigation of the impact of program history and oxide-metal interface on OxRRAM retention

dc.typeProceedings paper
dspace.entity.typePublication
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