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The impact of ultra thin ALD TiN metal gate on low frequency noise of CMOS transistors

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dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorSubramanian, Vaidy
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSansen, Willy
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-16T17:55:35Z
dc.date.available2021-10-16T17:55:35Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12571
dc.source.beginpage33
dc.source.conferenceNoise and Fluctuations, 19th International Conference
dc.source.conferencedate9/09/2007
dc.source.conferencelocationTokyo Japan
dc.source.endpage38
dc.title

The impact of ultra thin ALD TiN metal gate on low frequency noise of CMOS transistors

dc.typeProceedings paper
dspace.entity.typePublication
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