Publication:
Patterning process and electrical yield optimization at the limits of single exposure EUV 0.33 NA: a pitch 26nm damascene process
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0009-0004-9876-7222 | |
| cris.virtual.orcid | 0000-0003-4308-0381 | |
| cris.virtual.orcid | 0009-0008-7831-564X | |
| cris.virtualsource.department | 622638b0-5966-43be-ae63-48c25250bf6d | |
| cris.virtualsource.department | 88d4cdb2-8ec4-4aa4-87ee-9719850d7416 | |
| cris.virtualsource.department | 046a4037-4001-4b14-a082-e7938355f1f1 | |
| cris.virtualsource.orcid | 622638b0-5966-43be-ae63-48c25250bf6d | |
| cris.virtualsource.orcid | 88d4cdb2-8ec4-4aa4-87ee-9719850d7416 | |
| cris.virtualsource.orcid | 046a4037-4001-4b14-a082-e7938355f1f1 | |
| dc.contributor.author | Blanco, Victor | |
| dc.contributor.author | Vandersmissen, Kevin | |
| dc.contributor.author | De Wachter, Bart | |
| dc.contributor.author | Nafus, K. | |
| dc.contributor.author | Feurprier, Y. | |
| dc.contributor.author | Thiam, A. | |
| dc.contributor.author | Hsu, A. | |
| dc.contributor.author | Tabery, C. | |
| dc.contributor.author | Doise, J. | |
| dc.contributor.author | De Schepper, P. | |
| dc.contributor.imecauthor | Carballo, V. M. Blanco | |
| dc.contributor.imecauthor | Vandersmissen, K. | |
| dc.contributor.imecauthor | De Wachter, B. | |
| dc.date.accessioned | 2025-03-06T20:45:32Z | |
| dc.date.available | 2025-03-06T20:45:32Z | |
| dc.date.issued | 2024 | |
| dc.identifier.doi | 10.1109/IITC61274.2024.10732293 | |
| dc.identifier.eisbn | 979-8-3503-8517-5 | |
| dc.identifier.isbn | 979-8-3503-8518-2 | |
| dc.identifier.issn | 2380-632X | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45324 | |
| dc.publisher | IEEE | |
| dc.source.conference | 2024 International Interconnect Technology Conference | |
| dc.source.conferencedate | 2024-06-24 | |
| dc.source.conferencelocation | San Jose | |
| dc.source.numberofpages | 3 | |
| dc.title | Patterning process and electrical yield optimization at the limits of single exposure EUV 0.33 NA: a pitch 26nm damascene process | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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