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Patterning process and electrical yield optimization at the limits of single exposure EUV 0.33 NA: a pitch 26nm damascene process

 
dc.contributor.authorBlanco, Victor
dc.contributor.authorVandersmissen, Kevin
dc.contributor.authorDe Wachter, Bart
dc.contributor.authorNafus, K.
dc.contributor.authorFeurprier, Y.
dc.contributor.authorThiam, A.
dc.contributor.authorHsu, A.
dc.contributor.authorTabery, C.
dc.contributor.authorDoise, J.
dc.contributor.authorDe Schepper, P.
dc.contributor.imecauthorCarballo, V. M. Blanco
dc.contributor.imecauthorVandersmissen, K.
dc.contributor.imecauthorDe Wachter, B.
dc.date.accessioned2025-03-06T20:45:32Z
dc.date.available2025-03-06T20:45:32Z
dc.date.issued2024
dc.identifier.doi10.1109/IITC61274.2024.10732293
dc.identifier.eisbn979-8-3503-8517-5
dc.identifier.isbn979-8-3503-8518-2
dc.identifier.issn2380-632X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45324
dc.publisherIEEE
dc.source.conference2024 International Interconnect Technology Conference
dc.source.conferencedate2024-06-24
dc.source.conferencelocationSan Jose
dc.source.numberofpages3
dc.title

Patterning process and electrical yield optimization at the limits of single exposure EUV 0.33 NA: a pitch 26nm damascene process

dc.typeProceedings paper
dspace.entity.typePublication
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