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Thin SiGe strain-relaxed buffer layers: carbon-induced relaxation

Date

2005
Proceedings Paper
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dc.contributor.authorCaymax, Matty
dc.contributor.authorDelhougne, Romain
dc.contributor.authorLoo, Roger
dc.contributor.authorRies, Michael
dc.contributor.authorLuysberg, Martina
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T00:54:44Z
dc.date.available2021-10-16T00:54:44Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10198
dc.source.conferenceICSI-4, 4th International Conference on Silicon Epitaxy and Heterostructures
dc.source.conferencedate23/05/2005
dc.source.conferencelocationAwaji Island, Hyogo Japan
dc.title

Thin SiGe strain-relaxed buffer layers: carbon-induced relaxation

dc.typeProceedings paper
dspace.entity.typePublication
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