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Seeing the invisible: metrology for extended crystalline defects in beyond silicon semiconductors

Date

2016
Proceedings Paper
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dc.contributor.authorSchulze, Andreas
dc.contributor.authorProkhodtseva, Anna
dc.contributor.authorVystavel, Tomas
dc.contributor.authorGachet, David
dc.contributor.authorBerney, Jean
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-23T14:44:26Z
dc.date.available2021-10-23T14:44:26Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27287
dc.source.conferenceInternational SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate7/06/2016
dc.source.conferencelocationNagoya Japan
dc.title

Seeing the invisible: metrology for extended crystalline defects in beyond silicon semiconductors

dc.typeProceedings paper
dspace.entity.typePublication
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