Publication:

Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors

Date

1996
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCuthbertson, Alan
dc.contributor.authorClaeys, Cor
dc.contributor.authorDeferm, Ludo
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-09-29T15:25:48Z
dc.date.available2021-09-29T15:25:48Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1487
dc.source.beginpage2261
dc.source.endpage2268
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume43
dc.title

Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors

dc.typeJournal article
dspace.entity.typePublication
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