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Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates

Date

2013
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dc.contributor.authorZhao, Ming
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorLiang, Hu
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorVancoille, Eric
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVancoille, Eric
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-21T15:07:30Z
dc.date.available2021-10-21T15:07:30Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23450
dc.source.conference10th International Conference on Nitride Semiconductors
dc.source.conferencedate25/08/2013
dc.source.conferencelocationWashington, DC USA
dc.title

Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates

dc.typeMeeting abstract
dspace.entity.typePublication
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