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Growth of high Ge content SiGe on (110) oriented Si wafers

Date

2011
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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVanherle, Wendy
dc.contributor.authorDekoster, Johan
dc.contributor.authorBender, Hugo
dc.contributor.authorMoussa, Alain
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffman, T.
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T14:19:38Z
dc.date.available2021-10-19T14:19:38Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19078
dc.source.conference7th International Conference on Silicium Epitaxy and Heterostructures
dc.source.conferencedate29/08/2011
dc.source.conferencelocationLeuven Belgium
dc.title

Growth of high Ge content SiGe on (110) oriented Si wafers

dc.typeOral presentation
dspace.entity.typePublication
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